职务职称:教授,博士生导师 |
|
所在单位:材料科学系 |
联系电话: |
电子邮箱:sxyang@buaa.edu.cn |
办公地点:新主楼D345 |
个人主页:http://shi.buaa.edu.cn/yangshengxue/zh_CN/index.htm |
|
|
Ø 基本情况:
杨圣雪,女,教授,博士生导师。2013.06于东北师范大学化学学院获理学博士学位;2013.05-2015.05于中国科学院半导体研究所超晶格国家重点实验室从事博士后研究;2015.05至今,在金沙8888js官方任教;2016.02-2017.02为美国加州大学洛杉矶分校公派博士后。已在国际著名期刊Adv. Mater.、Adv. Funct. Mater.、ACS Nano、Nano Lett.、Appl. Phys. Rev.、Adv. Sci、InfoMat等杂志上发表50余篇SCI论文,H因子31。担任中国材料研究学会青年工作委员会第九届及第十届理事会理事,担任中国材料学会纳米材料与器件专业委员会秘书,担任InfoMat、Nano Research等期刊青年编委。
Ø 主讲课程:
本科生课程:《新型功能材料》
Ø 研究方向:
(1)二维材料合成(CVD/CVT);二维材料异质结的构筑、器件微纳加工;二维材料器件的电学、光电、磁学、电催化性质研究。
Ø 教学科研成果:
获奖情况:
(1)2020年度国家级人才奖励计划青年学者。
发明专利:
(1)杨圣雪,高凡,一种二维磁性Fe3O4单晶纳米片的制备方法,2022,CN202111067710.2
代表性论文:
[1] Yujia Chen, Shengxue Yang*(通讯作者), et al. Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS2/Graphene Heterojunction Bubbles, ACS Nano 2022, https://doi.org/10.1021/acsnano.2c05272.
[2] Tianle Zhang, Shengxue Yang*(通讯作者), et al. Tuning the Exchange Bias Effect in 2D van der Waals Ferro-/Antiferromagnetic Fe3GeTe2/CrOCl Heterostructures, Adv. Sci. 2022, 9, 2105483.
[3] Shuai Liu, Yujia Chen, Shengxue Yang*(通讯作者), SnSe field-effect transistors with improved electrical properties, Nano Res., 2021, 15, 1532.
[4] Shengxue Yang*(第一作者/通讯作者), et al. Strain engineering of two-dimensional materials: Methods, properties, and applications, InfoMat. 2021, 3, 397.
[5] Shengxue Yang*(第一作者/通讯作者), et al. van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics, Adv. Sci. 2021, 8, 2002488.
[6] Shuai Liu, Tianle Zhang, Shengxue Yang*(通讯作者), Antimonene: A Potential 2D Material, Monoelements: Properties and Applications, 2020, Chapter 2, 27-56.
[7] Tianle Zhang, Shengxue Yang*(通讯作者), et al. Magnetism and Optical Anisotropy in van der Waals Antiferromagnetic Insulator CrOCl, ACS Nano 2019, 13, 11353.
[8] Shengxue Yang(第一作者), et al. In-plane Optical Anisotropy and Linear Dichroism in Low-Symmetry Layered TlSe, ACS Nano 2018, 12, 8798.
[9] Shengxue Yang(第一作者), et al. Highly In-plane Optical and Electrical Anisotropy of Two-Dimensional Germanium Arsenide, Adv. Funct. Mater. 2018, 28, 1707379.
[10] Shengxue Yang*(第一作者/通讯作者), et al. Highly-anisotropic optical and electrical properties in layered SnSe, Nano Res., 2018, 11, 554.